carrier recombination

Some improvement scheme to eliminate the limitations of the slow carrier recombination speed on the switch was introduced, including the asymmetry Fabry-Perot cavity design, low-temperature-grown of material with Be doped and the multiple-quantum-wells with photon crystal structure optical switch based on the optical Stark effect.

针对材料载流子恢复较慢对开关重复率的限制，我们提出了一些改进方案，包括非对称FP腔结构设计，材料的Be掺杂低温生长以及基于光学斯塔克效应的多量子阱光子晶体全光开关。

An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.

我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。

Measurement of Carrier Recombination Time Using Time-Delayed Four-Wave Mixing with Incoherent Light

用非相干光时间延迟四波混频测量载流子复合时间

The paper analyzes the effect of temperature and electric field on luminosity of an amorphous silicon carbon thin film light-emitting diode ( a-SiC: H TFLED), in terms of the transport model of carrier injection and recombination.

通过载流子注入和复合输运模型，分析比较了温度和电场对pin注入型非晶硅碳薄膜发光二极管（a-SiC：HTFLED）发光亮度的影响。

Using the metal-semiconductor contact model, the calculation formulas are derived. The diffusion length of minority carrier, interface recombination speed and heterojunction barrier width are calculated.

采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。

The calculation of β F indicates that the carrier recombination at polysilicon/ monosilicon emitter interface for the studied devices is very strong, and the value of recombination velocity S_p is up to 106cm/ s.

β＿F的计算表明，所研究器件的多晶硅／硅界面复合较强，复合速度S＿p达到10￣6cm／s。

After annealing in lower temperature, positive charge reduced and interface defect state does not changed, thereby speeding up the photo generated minority carrier recombination.

退火工艺中较低温度下退火后正电荷减少，界面缺陷态没有变化，从而加快了光生少数载流子的复合。

Numerical simulation of carrier recombination characteristics in light-emitting devices

有机发光器件中载流子复合特性的数值模拟

Effects of carrier mobilities on recombination efficiency in single layer organic diodes

载流子迁移率对单层有机发光二极管复合效率的影响

The optimization and qualification of ingots and bricks using carrier recombination and resistivity measurements.

利用载子合复寿命及电阻率量测针对硅锭，硅块进行合格检验及优化分析。

Analysis on effects of gain saturation and carrier recombination optimum design for multi quantum well lasers

考虑增益饱和及载流子复合效应优化设计多量子阱激光器

The minority carrier recombination in grain boundary and its width are considered.

考虑了晶粒间界厚度和其中的少数载流子复合，假设晶粒间界和晶粒具有不同的少数载流子迁移率和寿命。

Effective Surface passivation which is needed to reduce the surface states and the minority carrier loss by surface recombination has become one of the key steps in fabrication of black silicon solar cells.

为了减少黑硅的表面态，需要对其进行有效钝化，在黑硅表面生长钝化层是同时减少单晶硅太阳电池光学和电学损失，提高电池效率的关键。

Influence of carrier recombination in the space charge region and ingrain boundaries on minority carrier lifetime in the base region of polysilicon solar cells

空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响

The main topic is the low efficiency for electron injection, thereby causing imbalance of carrier recombination, resulting in low efficiency of light-emitting device, so the aim of this thesis is to improve the electron injection efficiency and luminous efficiency of the device.

本课题主要是针对电子注入效率低引起的载流子复合不平衡，最终影响器件的发光效率这一问题，而进行的研究工作，主要目的就是提高器件的电子注入效率。

BACKGROUUND: The vaccine in the prevention and treatment of the human variety of epidemic plays an indelible role, among them, genetic engineering live carrier recombination vaccine were aroused many researchers' attention by its elicits cellular, humoral and even mucosa immune response.

背景疫苗在预防和治疗人类多种疫症的过程中发挥了不可磨灭的作用。其中，基因工程重组活载体疫苗因其能够诱导产生体液、细胞甚至黏膜免疫而受到广大研究者的关注。

Energy band models of a Si ∶ H solar cells with buffer layer were established to explain the photoexcited carrier recombination kinetics near the p/ I interface, from theoretical point of view.

提出了带有缓变层a－Si∶H电池的能带模型，据此分析了p／i结附近载流子的复合动力学过程，从理论上解释了实验中所发现的现象。